Source: Carbon Collective

Understanding the Properties of Silicon

Atomic Properties

Silicon has an atomic density of 5 x 10^22 cm^-3 (5 x 10^28 m^-3) and an atomic weight of 28.09. It has a density of 2.328 g cm^-3 (2328 kg m^-3) and a lattice constant of 0.543095 nm.

Physical Properties

Silicon has a melting point of 1415°C and a thermal conductivity of 1.5 Wcm^-1K^-1 (150 Wm^-1K^-1). Its thermal expansion coefficient is 2.6 x 10^-6 K^-1. The relative permittivity of silicon is 11.7.

Electronic Properties

The energy bandgap of silicon (E_G) is 1.1242 eV. The intrinsic carrier concentration (n_i) at 300K is 1 x 10^10 cm^-3 (1 x 10^16 m^-3) and at 25°C is 8.6 x 10^9 cm^-3 (8.6 x 10^15 m^-3). The effective density of states in the conduction band (N_C) is 3 x 10^19 cm^-3 (3 x 10^25 m^-3), and in the valence band (N_V) is 1 x 10^19 cm^-3 (1 x 10^25 m^-3).

Carrier Mobility and Lifetime

The carrier mobility of silicon is dependent on carrier type and doping level. The lifetime as a function of doping is provided for bulk lifetime calculations.

Understanding these properties of silicon is crucial in various applications, especially in the field of semiconductors and electronics.

Source: Carbon Collective